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研究生:辜靖雯
研究生(外文):Chin-Wen Ku
論文名稱:FOW與DAF環保薄膜應用在堆疊尺寸晶片之封裝研究
論文名稱(外文):The Study of DAF & FOW in The Use of Stacked Die Package
指導教授:鍾卓良
指導教授(外文):Cho-Liang Chung
學位類別:碩士
校院名稱:義守大學
系所名稱:材料科學與工程學系碩士班
學門:工程學門
學類:綜合工程學類
論文種類:學術論文
論文出版年:2008
畢業學年度:96
語文別:中文
論文頁數:46
中文關鍵詞:薄膜型黏晶材料堆疊式晶片級封裝技術
外文關鍵詞:FOW (Film Over Wire)Stacked Chip Scale Package (SCSP)DAF (Die Attach Film)
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電子領域中產品的發展趨勢被要求尺寸縮減、性能提高和整合度提升。本文探討薄膜型黏晶材料主要應用於堆疊式晶片級封裝體(Stacked Chip Scale Package,SCSP)中,實驗重點於堆疊晶片封裝構造中選擇兩種薄膜型黏晶材料DAF(Die Attach Film)與FOW(Film Over Wire)做材料特性與應用表現之探討。
由熱分析與流變結果中發現FOW的填充物含量較多,具有較低的初始反應溫度及適合加工的區間較長且黏度較低,故材料的結構強度與加工性較好。由微結構分析結果指出FOW有緻密均勻的圓形填充物結構,可強化堆疊的強度,其填充物大小約為DAF的1/3,較不傷及晶片表面且提供較佳的流動性。後續製程模擬與可靠性實驗中,薄膜型黏晶材料與相關結構材料(晶片及銲線)接合情形良好,無脫層現象。兩相比較結果顯示FOW可以包覆保護銲線,無損傷現象,而DAF則因為強度不足以致於無法支撐堆疊晶片之間的空間,所以所包覆之銲線遭到上層堆疊晶片的擠壓,產生變形現象。基於以上特性分析與模擬實驗結果,了解FOW較適合作為堆疊晶片封裝的黏晶材料,原因在於其擁有較低的初始反應溫度與較多的緻密均勻大小的填充物,較低的初始溫度搭配有效的製程溫度則可於初期製程貼合使用時,取得較佳的材料成膜性質,應用於製程堆疊時,其均勻大小的填充物比例則可強化樣品堆疊結構。
The trend of the electronics product is required to reduce the package size, improve the performance and advance integration. This thesis discussed that the film type die attach material mainly applied in the stacked chip scale package (SCSP). The experiment chosed two types of film, DAF (Die Attach Film) and FOW (Film over Wire), to discuss the material characteristic and applied representation in the stacked die package structure.
The thermal analysis and Rheology datas showed FOW had more filler content, lower initial reaction temperature, longer working window and better viscosity presentation, it indicated FOW had well structure and workability. By micro structure analysis result presented the small, uniform and circular filler existed in the FOW and the filler size of FOW is 1/3 than DAF, it can enhance structure strength, provide good flow condition and doesn’t damage the die surface. The simulated experiment result showed good adhesion between the interfaces of the related material. No delamination has been observed in both types film packaging. However, DAF had bonding wire damaged issue due to poor structure strength. Based on above material characteristic and experiment simulated result, to understand the cause of preferred FOW to be die attach material in the stacked die package is it had lower initial reaction temperature and more uniform filler content; the lower initial reaction temperature collocate with effective process confition can get well film condition.
總目錄
中文摘要 I
英文摘要 III
誌謝 IV
總目錄 V
表目錄 VII
圖目錄 VIII
第一章 緒論 1
1.1 堆疊晶片構裝技術趨勢簡介 1
1.2 堆疊晶片構裝技術 2
1.3 堆疊晶片構裝研究與未來發展 4
第二章 文獻回顧 5
2.1 堆疊晶片封裝結構 5
2.2 黏晶材料的發展 6
2.3 常見黏晶材料簡介 8
2.3.1 黏晶膠材Spacer Paste 8
2.3.2 薄膜型黏晶材料 9
2.3.3 不同黏晶材料的差異 12
2.4 研究動機與目的 12
第三章 實驗步驟及方法 14
3.1 實驗構想 14
3.2 樣品處理製作 16
3.2.1 樣品結構 16
3.2.2 樣品製作流程 17
第四章 結果與討論 19
4.1 薄膜型黏晶基材特性分析 19
4.1.1 薄膜型黏晶基材採用 19
4.1.2 薄膜型黏晶基材TGA分析 19
4.1.3 薄膜型黏晶基材DSC分析 20
4.1.4 薄膜型黏晶基材Rheology分析 23
4.2 堆疊晶片封裝結構中不同黏晶材料分析 26
4.2.1 黏晶基材微結構分析 26
4.2.2 堆疊晶片封裝結構中黏晶材料微結構分析 27
4.2.3 堆疊晶片封裝結構中包覆銲線能力的觀察 30
4.3 加速試驗對黏晶材料表面黏著的影響 33
4.3.1 超音波掃描式顯微鏡觀察 33
4.3.2 加速試驗-壓力鍋試驗對黏晶材料表面黏著的影響 36
4.3.3 加速試驗-溫度循環試驗對黏晶材料表面黏著的影響 37
第五章 結論 39
參考文獻 43
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