臺灣博碩士論文加值系統

鑽石是高溫半導體材料，有著許多材料上之優異特性，仍是未來被開發應用之重要材料。鑽石被喻為二十一世紀的終極材料，具有許多材料無法媲美的物理、化學、機械及光學特性。研究主要的目的是要製作出有別於傳統鑽石修整器。傳統之修整器，如：BDD修整器 (BDD, Brased Diamond Disk)容易在修整拋光墊時，產生鑽石顆粒的掉落及崩落或修整器上鑽石顆粒高度差異太大，這些都容易導致刮傷晶圓表面或刺入深度不同導致修整效率降低；隨後於2006年中國砂輪公司又推出了ADD鑽石修整器(ADD, Advanced Diamond Disk)，它的原理是以線切割方式在多晶鑽石燒結體上切割成對稱之金字塔，它的鑽石頂點高度小於20 μm，大大改良先前較差的鑽石修整器，但缺點為價錢貴且製程速度較慢。
CVD鑽石修整器乃應用半導體製程技術發展出CVD(Chemical Vapor Deposition)鑽石的修整器，並應用於化學機械拋光製程之拋光墊修整。最後，將CVD鑽石修整器與傳統鑽石修整器對半導體產業常用的IC1000拋光墊作修整試驗，並且針對修整後之拋光墊表面形貌及鑽石磨粒表面作一系列探討。結果發現CVD修整器來修整拋光墊，將可花費較少的修整時間，即可達到拋光墊穩定的表面粗糙度，並且可以獲得穩定的晶圓移除率，達到CMP製程穩定的要求，因此CVD鑽石修整器是未來CMP(Chemical Mechanical Polishing）值得研究及發展的修整器。

The diamond, mainly used in high temperature semiconductor applications, has many outstanding physical, chemical, mechanical and optical characteristics, which many other materials are unable to compete with. The main goal of this study is to manufacture a diamond disk better than the traditional diamond disk. The traditional diamond disk has many drawbacks, for example, Brased Diamond Disk (BDD) easily results in diamond pellets falling on the disk while it is dressing the pad. The height deviation among the diamond grit tips is quite big, therefore, it is easy to scratch the wafer surface or cause the polishing rate to be decreased during the dressing process. Advanced diamond disk (ADD) manufactured by wire-EDM cutting of sintered polycrystalline diamond (PCD) blank has diamond grit tip height lower than 20 microns with smaller height deviation than the tranditional diamond disk. However, it has the shortcoming of being expensive with a longer manufacture process.
The Chemical Vaper Deposition (CVD) diamond disk, used for dressing the pad during the chemical mechanical polishing (CMP) process, is developed in this study using traditional semiconductor processing technique. The experiment of dressing the IC1000 pad using CVD diamond disk and the traditional diamond disk is conducted and the surface morphology of the pad and the diamond grit obtained after dressing are examined. The results showed that it took fewer time to dress the pad using the CVD diamond disk. The dressing stability involved in the CMP was obtained. A better surface roughness of the pad was found able to be achieved leading to a stable wafer polishing rate. Therefore the CVD diamond disk is considered to be worth being studied and developed for the future CMP applications.

誌謝
摘要
ABSTRACT
目錄
表目錄
圖目錄
符號說明
1. 緒論
1.1 研究動機及背景
1.2 研究目的
1.3 本文架構
2. 文獻回顧
3. 實驗設備與製程規劃
3.1 實驗材料
3.2 實驗設備
3.2.1 實驗製程設備
3.2.2 實驗分析設備
3.3 實驗製程規畫
4. 實驗結果與討論
4.1 鑽石陣列微結構製程探討
4.1.1 SEM形貌觀察
4.1.2 矽非等向性蝕刻製程
4.1.2.1氧化層厚度的影響
4.1.2.2 時間參數的影響
4.2. 鑽石修整器之修整應用探討
4.2.1拋光墊表面粗糙度之比較
4.2.2拋光墊表面形貌之比較
4.2.3拋光墊移除率之比較
4.2.4拋光墊表面鈍化修整之比較
4.2.5鑽石修整器磨耗比較
5. 結論與未來展望
5.1 結論
5.2 未來展望
參考文獻
自傳

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