臺灣博碩士論文加值系統

厚膜光阻AZ 4620 目前已慚慚被廣泛應用，通常它使用在微流道或是微機電有關的製程，且AZ 4620光阻的最佳化聚合作用已被詳細的研究完成，AZ 4620是個環氧基底的光阻，它被設定為製作微電相關製程的光阻，AZ 4620 光阻通常使用深紫外光做為最佳化製程的條件，在本文吾人對AZ 4620光阻在製程時機械特性與熱特性做完善的研究與計錄，像是光阻的軟烤時間與溫度，曝光的劑量和時間，這些重要的製程參數都有做完整的計錄，此外，吾人使用氧電漿處理來改變光阻表面的特性，量測其接觸角，我們可以發現光阻表面從疏水性到親水性之間的變化，表面特性的改變可以使微機電元件製程可以有更多的應用，在本文，吾人針對AZ 4620光阻的轉速關係、軟烤時間溫度、曝光時間劑量、氧電漿處理…等等做完善計錄，以利於未來能改善有關半導體與與微機電有關的製程參數。

Interest in thick positive photoresist of AZ4620 applications is steadily growing. AZ4620 is generally used in microfluidic and MEMS applications. Detailed investigations of optimization results for AZ4620 photoresist polymerization have been performed. AZ4620 is an epoxy based resist designed for thick MEMS-type application. The optimization results of AZ4620 polymerization under near UV lithography are reported. In this paper, the characteristic of mechanical and thermal properties has been carried out. The results indicated that soft baking temperature, prebake time, exposure time and exposure dose are important factors for the application of AZ4620. Besides, hydrophobic and hydrophilic surfaces of thickness film (AZ4620) can be made easily by oxygen-plasma-treated. By contact angle measurement ,we found that the AZ4620 film transformed from hydrophobic to hydrophilic with oxygen plasma treatment. Because of the simplicity of use of the resist in addition to the large range of possible application, the optimal process can be obtained in order to completely exploit the potential of thick resist film AZ4620. In this paper, the properties of positive photoresist AZ4620 is very sensitive to the processing condition, Attention is focused on the effects of the spin speed, prebake temperature, exposure time and oxygen plasma treatment on the AZ4620 photoresist. The understanding of these effects is relatively important in improving the quality of thick photoresist applications for semiconductor or MEMS industry.

中文摘要 i
英文摘要 ii
誌謝 iii
目錄 iv
表目錄 vi
圖目錄 vii
符號說明 viii
一、 前言 1
1.1 研究背景 1
1.2 研究目的 3
二、 原理與文獻回顧 4
2.1 光阻微影製程 5
2.1.1 表面清洗 5
2.1.2 塗底 6
2.1.3 上光阻 8
2.1.4 預烤 9
2.1.5 曝光 9
2.1.6 接觸式法 9
2.1.7 鄰邊式法 10
2.1.8 曝後烤 11
2.1.9 顯影 12
2.1.10 硬烤 12
2.1.11 正、負型光阻 12
2.1.12 解析度 13
2.2 薄膜應力 14
2.3 薄膜表面特性 15
2.3.1 表面自由能 16
2.3.2 薄膜潤濕性 17
2.3.3 影響接觸角的因素 22
2.3.4 電漿表面改質對親疏水性的影響 22
三、 製程規劃與步驟 24
3.1 實驗規劃 24
3.2 實驗步驟 25
3.3 實驗設備 28
四、 實驗結果與討論 39
4.1 光阻厚度與轉速關係 39
4.2 光阻的熱應力分析 41
4.3 軟烤溫度與曝光劑量的關係 43
4.4 光阻表面處理 45
4.5 AZ4620光阻與顯影時間關係 51
4.6 AZ4620光阻與硬烤時間的關係 53
4.7 AZ 4620光阻與曝光型式的關係 55
五、 結論與心得 58
參考文獻 61

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