臺灣博碩士論文加值系統

隨著科技快速的日新月異，手機、PDA、無線網路…等個人通訊科技產品蓬勃發展，進而高頻元件也隨著市場上的需求而倍增。所以擁有體積小、材質堅固、良好的壓電特性、高表面聲波波速、高機電耦合係數等優點的表面聲波濾波器元件因而變得相當熱門。 本文研究使用射頻磁控濺鍍系統（Reactive RF Magentron Sputtering System），濺鍍壓電薄膜材料氮化鋁（AlN），並沉積不同結晶結構之上、下電極製作其聲波元件。首先於P型（100）矽基板上濺鍍上不同結晶結構的底電極：面心立方體（face-centered cubic，FCC）：鋁（Al）；體心立方體（body-centered cubic，BCC）：鉬（Mo），經由XRD、SEM、AFM分析後，選擇較好之參數，於不同電極上面成長c軸優選取向之氮化鋁（AlN）薄膜，再以XRD、SEM、AFM分析氮化鋁沉積於不同結晶結構之底電極上的結晶結構與性質，最後利用網路分析儀分析氮化鋁沉積於不同電極之結合後的聲波元件，在不同溫度下是否會影響其壓電性質。

Change with each passing day quickly along with science and technology, cellular phone, PDA, wireless network …etc. Personal communication science and technology product booming development, the then high frequency devices is also along with the need of the market and doubly. There are solidity small, the material is adamant and goodness piezoelectricity, the high surface acoustic wave goodly, high electromechanical coupling coefficient etc. The surface acoustic wave filter component as a result become rather popular. The reactive RF Magentron Sputtering System technique was employed in this study. Depends the piezoelectric property of aluminum nitride(AlN) thin film,and depends the allomerism crystalline structure electrode to manufacture it’s acoustic wave devices.First, depends allomerism crystalline structure electrode on P type （100）silicon sustrate.face-centered cubic（FCC）：Al；body-centered cubic（BCC）：Mo. By way of XRD、SEM、AFM analyzed and choice better of parameter, depends the piezoelectric property of aluminum nitride(AlN) thin film have good c-axis orientation crystalline structure on allomerism crystalline structure electrode. To use XRD、SEM、AFM analyzed crystalline the structure and property.Final, fabrication acoustic wave devices to measurement piezoelectricity of different temperature by network analyzer.

總目錄 中文摘要········································································································Ⅰ 英文摘要········································································································Ⅱ 總目錄············································································································Ⅲ 表目錄············································································································Ⅳ 圖目錄············································································································Ⅴ 第一章 緒論·····································································································1 1.1 前言····································································································1 1.2 文獻回顧····························································································1 1.3 研究目的····························································································4 第二章 基礎理論···························································································5 2.1 壓電效應····························································································6 2.2 壓電材料····························································································7 2.3 表面聲波元件參數············································································8 2.3.1 聲波波速（Vp）····································································8 2.3.2 機電耦合係數（K2）·····························································9 2.3.3 溫度效應係數（TCD）·························································9 2.3.4 插入損失（IL）···································································10 2.4 電漿的產生······················································································10 2.5 反應性射頻磁控濺鍍原理······························································11 2.5.1反應性濺鍍（Reactive sputtering）······································11 2.5.2 射頻濺鍍（RF sputtering）·················································11 2.5.3 磁控濺鍍（Magnetron sputtering）·····································12 2.6 薄膜成核原理··················································································13 2.7 薄膜體聲波諧振器（FBAR）作用原理········································14
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2.8 氮化鋁的結構與特性······································································16 第三章 實驗方法與步驟·············································································23 3.1 矽基材的清洗··················································································23 3.2 金屬底電極沉積··············································································24 3.3 氮化鋁薄膜沉積··············································································24 3.4 底電極與氮化鋁薄膜分析······························································25 3.4.1 低掠角入射X光繞射··························································25 3.4.2 場發射型掃描式電子顯微鏡···············································26 3.4.3 原子力顯微鏡·······································································26 3.4.4 穿透式電子顯微鏡·······························································27 3.5 聲波元件的製作··············································································27 3.6 電性量測··························································································28 第四章 實驗結果與討論·············································································38 4.1 以最佳參數濺鍍氮化鋁（AlN）於矽基板上之分析····················38 4.1.1 X光繞射分析········································································38 4.1.2 AFM分析··············································································38 4.1.3 FESEM分析··········································································39 4.1.4 穿透式電子顯微鏡（TEM）分析·······································39 4.2 濺鍍鋁（Al）電極於矽基板上之分析··········································40 4.2.1 鋁電極於矽基板上之X光繞射分析···································40 4.2.2 鋁電極於矽基板上之AFM分析·········································40 4.2.3 鋁電極於矽基板上之FESEM分析·····································41 4.2.4 氮化鋁/鋁電極於矽基板上之分析······································41 4.3 濺鍍鉬（Mo）電極於矽基板上之分析·········································41 4.4 濺鍍氮化鋁（AlN）於不同電極上之電性分析····························42 第五章 結論·································································································59
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參考文獻········································································································60 V
表目錄 表2.1 一些壓電材料的特性·········································································17 表2.2 氮化鋁的物理與化學性質·································································18 表3.1 表面聲波元件常用之電極材料特性·················································29 表3.2 濺鍍鋁薄膜實驗參數·········································································29 表3.3 濺鍍鉬薄膜實驗參數·········································································30 表3.4 濺鍍氮化鋁薄膜實驗參數·································································30 表3.5 氮化鋁JCPDS卡型號為（25-1133）資料表···································31 表3.6 鋁薄膜JCPDS卡型號為（03-0932）資料表···································32 表3.7 鉬薄膜JCPDS卡型號為（42-1120）資料表···································32
圖目錄 圖2.1 壓電現象·····························································································19 圖2.2 壓電效應·····························································································19 圖2.3 反應性濺鍍之示意圖·········································································20 圖2.4 磁控濺鍍之示意圖·············································································20 圖2.5 薄膜成核過程·····················································································21 圖2.6 FBAR結構示意圖···········································································21 圖2.7 表面聲波元件結構圖·········································································22 圖2.8 氮化鋁基本結構（a）單位晶胞（b）變形四面體結構··················22 圖3.1 實驗流程圖·························································································33 圖3.2 濺鍍系統示意圖·················································································34 圖3.3濺鍍系統實體圖··················································································34 圖3.4 腔體整體示意圖·················································································35 圖3.5 腔體整體實體圖·················································································35 圖3.6 聲波元件結構圖·················································································36 圖3.7 聲波元件實體圖·················································································36 圖3.8 網路分析儀連接聲波元件·································································37 圖3.9 溫度錶·································································································37 圖4.1 不同濺鍍功率下沉積氮化鋁薄膜之X光繞射圖·····························44 圖4.2 不同濺鍍功率下沉積氮化鋁薄膜之AFM 3D圖·····························45 圖4.3 不同濺鍍功率下沉積氮化鋁薄膜之FESEM表面型態圖···············46 圖4.4 濺鍍功率為200W之氮化鋁薄膜橫截面圖······································47 圖4.5 沉積氮化鋁薄膜橫截面圖（a）明視野（BF）圖（b）暗視野（DF） 圖··········································································································48 圖4.6 沉積氮化鋁薄膜不同位置之擇區繞射圖（SADP）（a）Step1（b） VII
Step2（c）Step3（d）Step4（e）Step5··············································49 圖4.7 不同濺鍍功率下沉積鋁電極之X光繞射圖·····································50 圖4.8 不同濺鍍功率下沉積鋁電極之AFM 3D圖·····································51 圖4.9 不同濺鍍功率下沉積鋁電極之FESEM表面型態圖·······················52 圖4.10 不同濺鍍功率沉積AlN/Al之X光繞射圖·····································53 圖4.11 不同濺鍍功率沉積AlN/Al之AFM 3D圖·····································54 圖4.12 不同濺鍍功率沉積AlN/Al之FESEM圖·······································55 圖4.13 沉積AlN/Al之FESEM圖······························································56 圖4.14 濺鍍功率50W下沉積鉬電極之X光繞射圖·································56 圖4.15 濺鍍功率50W下沉積鉬電極之AFM 3D圖·································57 圖4.16 濺鍍功率50W下沉積鋁電極之FESEM表面型態圖···················57 圖4.17 Al/AlN/Al結構之共振頻率圖··························································58 圖4.18 於不同溫度下量測之共震頻率圖···················································58
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