臺灣博碩士論文加值系統

中文摘要
氧化銦錫(Indium Tin Oxide, ITO)最目前廣泛使用的透明導電材料。由於其導電性佳、在可見光區域的穿透率高、在紫外光區具有高吸收等特性。同時在化學上的性質穩定性佳，隨著光電產業的快速成長，被相當廣泛的應用著。
本論文探討以電子束蒸發法將ITO鍍於玻璃試片上沉積透明導電膜。在製程中分別調整及控制氧流量、製程基板溫度、膜層厚度以求較佳參數，同時調整改變電子束的加速電壓，來探討各種參數變化對ITO透明導電膜之電性及光性的影響。
本論文對各參數對薄膜品質之影響做一系統性之探討。本論文之研究，在適當的參數控制下，在波長470nm的穿透率均在95%以上，片電阻值在9.8(Ω/□)以下。

Abstract
ITO is the most popular material for transparent electrical conduction film of commercial applications. There are several applications based on its excellent properties such as good conductivity, high transmittance rate for visible light, high absorbability for ultraviolet region and good chemical stability.
This thesis studies the e-beam vaporized ITO thin film on glass substrate. The optical and electrical properties were studies with several process parameters such as the flow rate of oxygen, growth temperature, e-beam accelerated voltage.
Systematic studies for the ITO related process parameters in the e-beam technology were well done in this thesis. With well controlled ITO film with process parameters optimized in the thesis, sheet resistance as low as 9.8(Ω/□) and high transparency as 95% with wavelength 470nm can both be achieved.

中文摘要……………………………………………i

英文摘要……………………………………………ii

誌謝…………………………………………………iii

表目錄………………………………………………v

圖目錄………………………………………………vi

一、緒論……………………………………………1
1.1 前言……………………………………………1
1.2 研究動機………………………………………6
二、基礎理論………………………………………11
2.1 ITO結構與電性………………………………11
2.2 ITO的光學性質………………………………19
2.3電阻與片電阻…………………………………22
2.4電子蒸鍍原理…………………………………23
三、實驗設備及步驟………………………………28
3.1實驗設備簡介…………………………………28
3.1.1蒸鍍系統……………………………………29
3.1.2真空抽氣系統及抽氣流程…………………30
3.1.3電子束蒸鍍系統……………………………31
3.1.4監控系統……………………………………32
3.2實驗材料………………………………………38
3.3鍍膜實驗步驟…………………………………39
3.3.1實驗的步驟…………………………………39
3.3.2基板製前處理………………………………40
3.3.3真空電子束蒸鍍實驗步驟…………………40
3.4薄膜性質測量…………………………………41
3.4.1電阻質量測…………………………………41
3.4.2厚度量測……………………………………42
3.4.3光學量測……………………………………43
四、研究與分析……………………………………44
4.1製程氧流量參數………………………………44
4.1.1氧流量對電性的影響………………………44
4.1.2氧流量對光學性值的影嚮…………………45
4.2製程溫度參數……………………………………48
4.3薄膜厚度製程參數………………………………53
4.4電子束加速電壓參數……………………………55
五、結論………………………………………………59
參考文獻………………………………………………60
簡歷……………………………………………………63

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