臺灣博碩士論文加值系統

由於半導體技術的快速發展以及薄膜技術的逐漸成熟，使得透明導電薄膜的功能與價值日受重視。透明導電薄膜是指可以被可見光穿透、且導電性良好的薄膜；它的用途極廣，可使用於太陽能電池(solar cells)、平面顯示器(flat panel display，FPD)、觸鍵式面板(touch panel)和光電偵測器(photodetectors)等器材上；但目前透明導電薄膜主要用途，還是被使用作為平面顯示器之透明導電電極。
透明導電薄膜的材料，主要是採用在可見光範圍有較高的穿透率的摻雜異價陽離子之氧化物半導體，如ITO(tin-doped indium oxide)、IZO(indium zinc oxide)等。目前工業上使用之透明導電薄膜材料為ITO，但在已知透明導電薄膜材料中，銦鋅氧化物-IZO-薄膜，為極具潛力之ITO薄膜的替代材料。和ITO薄膜相較之下，IZO薄膜在低溫下即可被鍍製成穩定的透明導電薄膜，此一特性不論在製備及蝕刻處理上都比ITO薄膜有優勢。
本研究之目的即以溶膠-凝膠法製備濺鍍用IZO靶材及配合RF磁控濺鍍法鍍製不同成分比例之IZO透明導電薄膜，並探討鍍製功率、基板溫度及氧化銦鋅比例對其薄膜性質之影響。
實驗之結果顯示，以溶膠-凝膠法製備之IZO靶材，在不同功率及基板溫度下所鍍製之薄膜，其電性亦有不同程度的表現。經由不同氧化銦含量的探討，發現當靶材中氧化銦之重量百分比低於50wt%時，濺鍍所得之薄膜為結晶性之導電薄膜；當氧化銦之重量百分比大於50wt%時，濺鍍所得之薄膜為非晶性之導電薄膜。而其中以氧化銦含量為90wt%的IZO靶材所鍍製之薄膜，其導電特性最佳。本研究中，以90wt%氧化銦含量之IZO靶材在Ar流量20sccm、操作壓力1.5 x 10-3 Torr、濺鍍功率30W、及基板不加熱下，濺鍍所得之非晶性導電薄膜之導電能力最佳，其電阻係數為4.95 x 10-4 Ω•㎝ 。

Due to the gradual maturing of thin film processing technology and the fast developing of semiconductor technology, the functionality and the value of transparent conductive thin films become increasingly crucial to the industry and can not be overlooked. Transparent conductive thin films are thin films that have such properties as high visible light transmission and great electrical conductivity. They can be used in such devices as solar cells, flat panel displays, touch panels, and photodetectors. Currently, transparent conductive thin films are primarily used in liquid crystal displays as the transparent electrodes.
The materials for transparent conductive thin films are mainly hetero-valenced cation -doped oxide semiconductors that have high visible light transmittance. Such materials include tin-doped indium oxides (ITO), indium zinc oxides (IZO), and etc. Currently, the materials used for transparent conductive thin films in the industry are ITO. However, IZO thin films have great potentials to replace ITO thin films. Compared to ITO thin films, stable IZO thin films can be deposited at lower temperature while maintaining high visible light transmittance and high electrical conductivity. This low temperature processing capability allows IZO thin films to be more competitive than ITO thin films in both preparation and etching processes.
The objectives of this research are to prepare IZO sputtering targets by sol-gel method and to deposit IZO transparent conductive thin films with different compositions using RF magnetron sputtering and the sol-gel derived targets. In addition, the effects of sputtering power, substrate temperature, and composition of target on the characteristics of the sputtered thin films are also investigated.
From the experimental results, it is shown that thin films prepared by sol-gel derived targets exhibited different electrical properties when deposited under different sputtering powers and substrate temperatures. By changing the proportion of indium oxide in the target, it was found that crystalline transparent conductive IZO thin films were prepared by sputtering when the weight percentage of indium oxide in the targets was less than 50 %. When the weight percentage of indium oxide in the targets was more than 50 %, non-crystalline transparent conductive IZO thin film were sputter-deposited. Among the targets of different indium oxide compositions, it is found that IZO thin films prepared by targets with 90 weight percent of indium oxide have the best electrical conductivity. In our sputtering system, we found the optimum deposition condition for IZO thin film is: IZO target with 90 weight percent of In2O3, mass flow rate of Ar 20 sccm, operating pressure 1.5 x 10-3 torr, sputtering power 30 W, and unheated substrate. Combining these processing parameters, noncrystalline IZO thin films with resistivity coefficient as low as 4.95 x 10-4 Ω˙cm were prepared.

誌謝iv
目錄v
圖目錄viii
表目錄viii
摘要xiv
Abstractxvi
第一章 緒 論1
1.1 前言1
1.2 透明導電薄膜之應用3
1.3 研究目的4
第二章 文 獻 回 顧7
2.1 銦鋅氧化物的結構與特性簡介7
2.2 銦鋅氧化物薄膜之電學性質11
2.3 銦鋅氧化物薄膜之光學性質14
2.4 銦鋅氧化物[IZO(90WT%)]與銦錫氧化物(ITO)之比較18
2.5 實驗理論基礎20
2.5.1 濺鍍原理20
2.5.2 電漿的種類21
2.5.3 直流電漿(DC plasma) (14)與交流電漿(AC plasma)21
2.5.4 磁控濺鍍法(Magnetron Sputtering Deposition)23
2.5.5 薄膜沈積的原理26
2.5.6 溶膠-凝膠法30
第三章 實驗方法與步驟38
3.1 實驗設備38
3.2 實驗材料41
3.3 實驗流程41
3.3.1 前驅溶液(precursor solution)的配製43
3.3.2 靶材的製作45
3.3.3 薄膜的鍍製47
3.3.4 薄膜性質的分析48
第四章 結果與討論53
4.1 銦鋅氧化物(IZO)粉末及靶材性質比較53
4.1.1 IZO乾膠之熱分析53
4.1.2 IZO粉末及靶材之SEM及粒徑分析56
4.1.3 IZO粉末及靶材之XRD分析60
4.2 薄膜的結晶構造與形態之探討65
4.2.1 不同 含量IZO薄膜分析65
4.2.1-1 IZO1薄膜分析：65
4.2.1-2 IZO2薄膜分析：77
4.2.1-3 IZO3薄膜分析：82
4.2.1-4 IZO4薄膜分析：91
4.2.2 操作壓力對IZO4薄膜性質的影響103
4.2.3 Ar流量對IZO4薄膜性質的影響110
4.3 不同 含量IZO薄膜比較117
第五章 結論127
未來展望129
參考文獻130
附錄132

1.李玉華 〞透明導電膜及其應用 〞, 科儀新知 第十二卷第一期 1990. p 94-102.
2.許國銓 〞科技玻璃-高性能透明導電膜玻璃 〞, 材料與社會. 84期 82 p 110-119.
3.Kobayashi,Y. Ishida,Y. Nakato and H.Tsubo -mura J. Appl.Phys.69(1991)1736
4.H.Koh,K. Sawada,M.Ohga wara, T.Kuwata, M,Akatsnka and M .Matsuhiro :SID Dig. Tech.Pap.19(1988)53
5.Olvera, M. de la L. Maldonado, A. Asomoza, R. Konagai, M. Asomoza, M., Thin Solid Films. v 229 n 2 Jun 25 1993. p 196-200.
6.Hu, Jianhua. Gordon, Roy G., Materials Research Society Symposium Proceedings. v 283 1993. p 891-896.
7.Zhang, K. Zhu, F. Huan, C. Wee, A. Osipowicz, T., Surface and Interface Analysis v 28 n1 1999. p 271-274.
8.H-C. Lu, C-F Hong, G-M Wu, Proceedings of 1998 Annual Conference of The Chinese Society for Materials Science.
9.Martinez, M.A. Herrero, J. Gutierrez, M.T., Solar Energy Materials and Solar Cells v 45 n1 Jan 1 1997. p 75-86.
10.Szyszka, B. Jaeger, S., J. Non-Crystalline Solids v 218 Sep 2 1997. p 74-80.
11.〞次世代デイスプレイに向けだ電極材料の提案 〞, 出光興產株式會社
12.Martinez, M A. Herrero, J. Gutierrez, M T., Solar Energy Materials & Solar Cells. v 45 n 1 Jan 1 1997. p 75-86.
13.Gomez, H. Maldonado, A. Asomoza, R. Zironi, E P. Canetas-Ortega, J. Palacios-Gomez, J., Thin Solid Films. v 293 n 1-2 Jan 30 1997. p 117-123.
14.莊達人 , 〞VLSI製造技術 〞, 高立出版社 , (1996) , p. 545 ~564
15.Cordaro, Jame F., Physica B: Condensed Matter. v 183 n 3 Mar 1993. p 303-311.
16.Messaoudi, C. Sayah, D. Abd-Lefdil, M., Physica Status Solidi A-Applied Research. v 151 n 1 Sep 1995. p 93-97.
17.B. Grycz. Non-equilibrium Process in plasma Technology , ed. B Gross , B. Grycz and K. Miklossy , American Elsevier Publishing Co., Inc., N.Y.,(1969). P.354 ~ 356
18.Y.Karasawa and Y.miyata , Thin solid films , 223(1993)135
19.S.H. Rossnagel , J. Vac. Sci. Technol. , A6(1)(1988)19
20.D.W. Hoffma , J. Vac. Sci. Technol., A3(3)(1985)561
21.張榮芳 , 洪敏雄 〞RF反應磁控濺射製備透明導電ZnO : Al薄膜之研究 〞, 國立成功大學材料及工程學系碩士論文.1997.
22.Czternastek, H. Brudnik, A. Jachimowski, M. Kolawa, E., J. Physics D-Applied Physics. v 25 n 5 May 14 1992. p 865-870.
23.S.Muranaka Y.Bando T.Takade Thin Solid Films.151(1987)355
24.K.Tominage et al. Thin Solid Films.281(1996)194
25.Kim, Kun Ho. Park, Ki Cheol. Ma, Dae Young., J. Applied Physics. v 81 n 12 Jun 15 1997. p 7764-7772.
26.洪家福 , 盧信 〞銦錫氧化物導電薄膜RF磁控濺鍍法配合溶膠-凝膠法之製備與鑑定之探討 〞長庚大學化工與材料工程學系碩士論文.1998
27.Czternastek, H. Brudnik, A. Jachimowski, M., Solid State Communications. v 65 n 9 Mar 1988. p 1025-1029.