臺灣博碩士論文加值系統

利用X光吸收近邊緣結構 (X-ray absorption near edge structure、XANES)，對利用不同濺鍍能量及含不同組成成份的矽碳氮(Si-C-N)薄膜加以研究探討；其中C的K-edge使用電子逸出方式 (electron yiled mode) 量測，N的K-edge則是使用螢光方式 (fluorescence mode) 量測。在C的K-edge中我們觀察到矽碳氮的光譜與b-SiC的光譜相似，但隨著濺鍍能量的不同及碳含量的增加而有鍵結結構上的變化，逐漸形成類似石墨的C=C的結構。而由N的K-edge吸收光譜中發現，與a-Si3N4的譜圖非常相像，都有很寬的吸收峰；隨著碳含量的增加，此吸收峰會些許往低能量區域位移，並且有明顯的精細結構出現。此結構一般預測為N=C與NºC的鍵結。在非晶相矽碳氮薄膜中，楊氏係數 (Young’s modulus)與密度 (Density) 隨著碳含量的增多而逐漸遞減，此結果可能與C原子的自相鍵結形成C=C或取代薄膜中的Si原子而與N原子形成N=C與NºC有關。

This study measured x-ray-absorption near edge structure (XANES) spectra of Si-C-N thin films with different sputtering energy and carbon content at the C K-edge using the sample drain current mode and at the N K-edge using the fluorescence mode. We have found out that the spectra of Si-C-N thin films at the C K-edge are similar with b-SiC and when the carbon content increasing, the p*-like peak become more smaller and has a small shift to high energy. It’s suggesting that carbon atoms in the Si-C-N films are bounding in C=C or graphite-like structure. From the N K-edge of the Si-C-N can be see a broader feature in the XANES spectra seems like the spectrum of a-Si3N4. At high carbon content, there are some fine structure appear at the energy about 400.1eV, resulting from the presence of N=C. The Young’s modulus and density decrease respectively as the carbon content of the films increases maybe because of the carbon atoms substitution the silicon atoms and bounded with nitrogen or carbon atoms and become more C=C or N=C structure.

目錄
致謝…………..………………………………………....i
中文摘要……..………………………………………..ii
英文摘要………………………………………..……iii
目錄…………..………………………………………..iv
圖表目錄………..……………………………………....v
I.矽碳氮薄膜研究背景………………………….….1
II.X光吸收光譜簡介………………………………..7
1.吸收截面與E0值…………….…………..……...9
2.X光吸收近邊緣結構(XANES)………………..10
3.X光延伸吸收精細結構(EXAFS)……………..14
4.實驗方法……….………………...….…………16
5.數據量測……………………………………….20
6.數據分析……………………………………….24
III.實驗數據分析…………………………..………..28
1.含矽氮化碳薄膜………..……………………...28
2.非晶相矽碳氮薄膜………………..…………...45
IV.結論..…………………………………………..…54
參考文獻..………………………..……………………55
圖表目錄
圖1光子能量與典型物質吸收截面關係圖……..…………………...…8
圖2 XANES與EXAFS分界圖………………...…..…………………..11
圖3光電子平均自由路徑與能量關係圖…...…………………….…...12
圖4單一散射與多重散射之圖像……...………………………….…...13
圖5 X光吸收光譜實驗裝置示意圖…...….…………………………...18
圖6三種電子訊號量測方法.…………….…………………………….19
圖7光子吸收過程……………………….……………………………..21
圖8同步輻射研究中心光源平面示意圖.….……………………….…23
圖9 X光吸收光譜之數據分析流程.…………………………………..27
圖10氮化碳薄膜的C K-edge XANES光譜圖…………………….…30
圖11含矽氮化碳薄膜的C K-edge XANES光譜圖…………………..31
圖12外加氮氣源的含矽氮化碳薄膜XANES光譜圖………………..32
圖13 750V C K-edge XANES光譜圖………………………………….34
圖14 1000V C K-edge XANES光譜圖………………………………..35
圖15 1250V C K-edge XANES光譜圖………………………………..36
圖16氮化碳薄膜的N K-edge XANES光譜圖……………………….38
圖17含矽氮化碳薄膜的N K-edge XANES光譜圖………………….39
圖18外加氮氣源的含矽氮化碳薄膜XANES光譜圖………………..40
圖19 750V N K-edge XANES光譜圖…………………………………42
圖20 1000V N K-edge XANES光譜圖……………………………….43
圖21 1250V N K-edge XANES光譜圖………………………………..44
圖22 C K-edge XANES光譜圖………………………………………..46
圖23扣完以Gaussian函數為背景的XANES光譜圖……………..….47
圖24 Young’s modulus及sp2對碳含量及N/C的比較圖..…………..49
圖25 N K-edge XANES光譜圖……………...………………………...51
圖26減去IC102的XANES光譜圖…………………………………..53
表1含矽氮化碳各條件的成長速率和成份比…………………………4
表2 a-Si-C-N成分分析及特性參數表.…………………………………5

參考文獻
1.A. Y. Liu and M. L. Cohen, Science 245, 841 (1989).
2.M. L. Cohen, Nature 338, 291 (1989).
3.C. Niu, Y. Z. Lu and C. M. Lieber, Science 261, 334 (1993).
4.K. J. Boyd et. al., J.Vac. Sci. Technol. A 13, 2110 (1995).
5.J. H. Kanfmann and S. Metin, Phys. Rev. B 39, (1989) 13053.
6."以離子束沈積CN與SiCN薄膜之研究", 私立輔仁大學, 吳建霆
7.L. C. Chen, C. K. Chen S. L. Wei, D. M. Bhusari, K. H. Chen, Y. F. Chen, Y. C. Jong, and Y. S. Huang, Appl. Phys. Lett. 72, 2463 (1998).
8.L. C. Chen, K. H. Chen, S. L. Wei, J. J. Wu, T. R. Lu, and C. T. Kuo, Thin Solid Films 355-356, 112 (1999).
9.A. Badzian, T. Badzian, R. Roy, and W. Drawl, Thin Solid Films 354, 148 (1999).
10.J. J. Wu, T. R. Lu, C. T. Wu, T. Y. Wang, L. C. Chen, K. H. Chen, C. T. Kuo, T. M. Chen, Y. C. Yu, C. W. Wang, and E. K. Lin, Diam. Relat. Mater. 8, 605 (1999).
11.J. J. Wu, C. T. Wu, Y. C. Liao, T. R. Lu, L. C. Chen, K. H. Chen, L. G. Hwa, C. T. Kuo, and K. J. Ling, Thin Solid Films 355-356, 417 (1999).
12.Y. K. Chang, H. H. Hsieh, W. F. Pong, M.-H. Tsai, K. H. Lee, T. E. Dann, F. Z. Chien, P. K. Tseng, K. L. Tsang, W. K. Su, L. C. Chen, S. L. Wei, K. H. Chen, D. M. Bhusari, and Y. F. Chen, Phys. Rev. B 58, 9018 (1998).
13.A. Badzian, T. Badzian, W. D. Drawl, and R. Roy, Diam. Relat. Mater. 7, 1519 (1998).
14.C. H. Hsieh, Y. S. Huang, K. K. Tiong, C. W. Fan, Y. F. Chen, L. C. Chen, J. J. Wu, and K. H. Chen, J. Appl. Phys. 87, 280 (2000).
15.F. G. Tarntair, C. Y. Wen, C. L. Chen, J. J. Wu, K. H. Chen, P. F. Kuo, S. W. Chang, Y. F. Chen, W. K. Hong, and H. C. Cheng, Appl. Phys. Lett. 76, 2630 (2000).
16."X-Ray Absorption : Principles, Application, Techniques of EXAFS, SEXAFS, SEXAFS and XANES" , edited by D. C. Koningsberger, and R. Prins, Chem. Analysis Vol.92 (Wiley 1988).
17."NEXAFS Spectroscopy" , edited by Joachim Stöhr (Springer-Verlag 1991)
18.E. A. Stern, M. Newville, B. Ravel, Y. Yaceby, and D. Haskel, Phys. B. 208镁, 117 (1995).
19."EXAFS and Near edge Structure", edited by A. Bianconi, L. Incoccia and S. Stipcich (Springer-Verlay 1983).
20.D. E. Sayers, E. A. Stern, and F. W. Lytle, Phys. Rev. Lett. 27, 1024 (1971).
21."Synchrotron Radiation Research", edited by H. Winick, S. Doniach (1980).
22."安全訓練手冊", 新竹同步輻射.
23."同步輻射光源簡介", 新竹同步輻射研究中心
24.J. F. Morar, F. J. Himpsel, G. Hollinger, G. Hughes, and J. L. Jordan, Phys. Rev. Lett. 54, 1960 (1985).
25.Y. Ma, N. Wassdahl, P. Skytt, J. Guo, J. Nordgren, P. D. Johnson, J. E. Rubensson, T. Boske, W. Eberhardt, and S. D. Kevan, Phys. Rev. Lett. 69, 2598 (1992).
26.R. A. Rosenberg, P. J. Love, and Victor Rehn, Phys. Rev. B 33, 4034 (1986).
27.P. A. Bruhwiler, A. J. Maxwell, C. Puglia, A. Nilsson, S. Andersson, and N. Martensson, Phys. Rev. Lett. 74, 614 (1995).
28.B. Angleraud, N. Mubumbila, P. Y. Tessier, V. Fernandez, and G. Turban, Diam. Relat.. Mater. 10, 1142 (2001).
29.Y. Gao, J. Wei, D. H. Zhang, Z. Q. Mo, P. Hing, and X. Shi, Thin Solid Films 377-378, 562 (2000).
30.D. H. Zhang, Y. Gao, J. Wei, and Z. Q. Mo, Thin Solid Films 377-378, 607 (2000).
31.T. Thärigen, D. Mayer, R. Hesse, P. Streubel, D. Lorenz, P. Grau, M. Lorenz, and R. Szargan, Fresenius J. Anal. Chem. 365, 244 (1999).
32.A. Avila, I. Montero, L. Galán, J. M. Ripalda, and R. Levy, J. Appl. Phys. 89, 212 (2001).
33.R. Franke, S. Bender, A. A. Pavlychev, P. Kroll, R. Riedel, and A. Greiner, J. Electron. Spectroscopy Relat. Phenom. 96, 253 (1998).
34.K. Suenaga, M. P. Johansson, N. Hellgren, E. Broitman, L. R. Wallenberg, C. Colliex, J. —E. Sundgren, and L. Hultman, Chem. Phys. Lett. 300, 695 (1999).
35.S. Souto, M. Pickholz, M. C. dos Santos, and F. Alvarez, Phys. Rev. B 57, 2536 (1998).
36.N. Hellgren, M. P. Johansson, E. Broitman, L. Hultman, and J. E. Sundgren, Phys. Rev. B 59, 5162 (1999)