臺灣博碩士論文加值系統

在本篇論文中，我們的研究目的乃利用 DSA (Dynamic surface anneal) ，就是所謂的動態表面退火，來研究它對多晶矽晶圓表面退火處理後，所產生電阻值的變化與在半導體技術上的應用及研究。DSA是一項新技術，利用高溫快速熱退火的方式使用在矽晶圓上。利用高功率紅外線激光束掃描迅速的在表面穿梭矽晶片。由於紅外能量通過激光，沉積速度比熱擴散在矽晶圓中，只有晶片表面達到退火溫度。以本次ANOVA實驗結果得知，在當前的設備，最佳方法配方為雷射在掃描速度250mm/sec、能量輸出60% 、溫度保持在250℃加熱及預熱35秒的狀況下，根據望目分析我們算出期望的電阻值為606.879 ohms/sq，經過實驗驗證後，我們得到的電阻值為611.057 ohms/sq，和我們期望的電阻值只有相差小於0.1%。

DSA, as known as Dynamic Surface Annealing, is a new technology for high temperature rapid thermal annealing of silicon wafers. A high power IR laser beam is scanned rapidly across the surface of the wafer. Since the IR energy deposition by the laser is faster than the thermal diffusion in silicon, only the surface of the wafer is able to reach the annealing temperature. The heat is dissipated through the silicon substrate and localized thermal gradients cause stress on the wafer. Base on the ANOVA result, in the present apparatus and best known methods that laser scanning speed at 250mm/sec, energy output 60%, temperature is keep at 250 degree C heating and warming up for 35 seconds conditions. According on Nominal the Best (NTB) analysis, we calculate the expect Resistance is 606.869 ohms/sq. After test and verify, we get the Resistance is 611.057 ohms/sq and deviation of Resistance is only less than 0.1%.

Contents
ABSTRACT (Chinese) I
ABSTRACT (English) II
Acknowledgement III
Contents IV
Figure captions V
Table captions VI
Chapter 1 Introduction 1
1.1 Overview of DSA Technology 1
1.2 DSA application 1
1.3 DSA research and purpose 2
Chapter 2 DSA tool hardware and process overview 4
2.1 DSA tool hardware component overview 4
2.1-1 Factory interface 6
2.1-2 Vantage frame 6
2.1-3 DSA Chamber 7
2.2 DSA Process calibration 12
Chapter 3 ANOVA method and data analyzsis 20
3.1 ANOVA method 20
3.2 Result and data analysis 21
Chapter 4 Conclusion 31
References 32

Figure captions
Figure 2-1 Top view of hardware component 5
Figure 2-2 Heat Distribution for 810nm Scanning Laser Beam 8
Figure 2-3 Z map profile 12
Figure 2-4 A conceptual diagram of CnfCZ and CnfZdist 13
Figure 2-5 Topology of wafer surface 14
Figure 2-6 Pyro focus not found 15
Figure 2-7 Pyro focus found , pyro is parabolic shape 15
Figure 2-8 Rs focus scan direction structure 16
Figure 2-9 Rs focus found profile 16
Figure 2-10 Plot drive current vs output power 18
Figure2-11 Wafer surface melting image 19
Figure 2-12 Mean effect plot of scan speed 22
Figure 2-13 Mean effect plot of laser power 22
Figure 2-14 Mean effect plot of heater temperature 23
Figure 2-15 Mean effect plot of lift pin pre-heat time 23
Figure2-16 S/N ratio plot of scan speed 24
Figure2-17 S/N ratio plot of laser power 24
Figure 2-18 S/N ratio plot of heater temperature 25
Figure 2-19 S/N ratio plot of lift pin pre-heat time 25
Figure 2-20 Resistance map of L9 orthogonal design matrix 27
Figure 2-21 Same Resistance scale of L9 orthogonal matrix 28
Figure 2-22 Resistance map of A2 B1 C1 D2 30
Table captions
Table 2-1 DSA hardware matrix 4
Table 2-2 Laser specific 7
Table 2-3 Laser drive current vs output power 18
Table 2-4 L9 orthogonal design matrix 21
Table 2-5 Response table 21
Table 2-6 Summary results obtained by the ANOVA analysis 29

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