臺灣博碩士論文加值系統

本論文是針對半導體蝕刻製程的乾式光阻去除機(Gasonics PEP 3510)的回灌汙染進行改善。而該汙染是乾式光阻去除機所屬的乾式幫浦突然故障所造成的。乾式光阻去除機在乾式幫浦的上方，二者以真空管路連接。當機台在進行去除光阻時，在下方的乾式幫浦突然故障，真空管路中的微粒便隨著乾式幫浦端回灌的氣流往上沖而汙染機台反應室。
位於反應室和乾式幫浦之間的機台氣動閘閥是靠電磁閥激磁導通後，以加壓的乾燥空氣的力量來開啟。為了改善該汙染，於是使用雙芯銅質電線，電線的一端串接在機台的電磁閥，另一端接在乾式幫浦的控制連接器上的pin 11和pin 14。因此在乾式光阻去除機與乾式幫浦之間形成一個串聯的連動迴路。主要是運用乾式幫浦故障時，pin 11和pin 14之間是開路的特性，使在同一迴路中的電磁閥，因斷路而無法激磁導通。由於電磁閥沒有導通，所以沒有加壓的乾燥空氣可以驅動氣動閘閥，因此氣動閘閥是關閉的。由於氣動閘閥的即時關閉，阻絕了往上沖的回灌氣流，所以反應室未受汙染。

This paper improvements backfilling pollution of dry photoresist- removal machine (Gasonics PEP 3510) in semiconductor's etching process. And that pollution is caused by the sudden failure of dry pump that belongs to the dry photoresist-removal machine. The dry photoresist-removal tool above dry pump, both connect to the vacuum line. When the machine during strips photoresist, beneath it, the dry pump suddenly fails, inside the vacuum line's particles that follow backfilling airflow of dry pump side to wash up to cause the pollution of machine's chamber .
Pneumatic gate valve of machine is located between the chamber and dry pump that use power of compressed dry air to open after the solenoid valve excited to turn on. In order to improve the pollution, so use twinax copper wire, one side of the wire is connected in series with the solenoid valve of machine, and the other side is connected with pin11 and pin14 of the dry pump’s control connector. So between the dry photoresist- removal machine and dry pump to form a interlocking loop of series connection. It is primarily to use the characteristic that between the pin11 and pin14 is open circuit when the dry pump fails, in the same loop, the solenoid valve can not be excited to turn on, because the open circuit. Because the solenoid valve is not turned on, therefore, no compressed dry air to drive the pneumatic gate valve, so pneumatic gate valve is closed. As the pneumatic gate valve is closed immediately, isolates backfilling airflow to washed up, so the chamber is uncontaminated.

誌謝．．．．．．．．．．．．．．．．．．．．．．．．Ⅰ
摘要．．．．．．．．．．．．．．．．．．．．．．．．Ⅱ
ABSTRACT．．．．．．．．．．．．．．．．．．．．．Ⅲ
目錄．．．．．．．．．．．．．．．．．．．．．．．．IV
表錄．．．．．．．．．．．．．．．．．．．．．．．．VI
圖錄．．．．．．．．．．．．．．．．．．．．．．．．VII
第一章 緒論．．．．．．．．．．．．．．．．．．．．1
1.1 前言．．．．．．．．．．．．．．．．．．．．．1
1.2 研究動機．．．．．．．．．．．．．．．．．．．1
1.3 論文架構．．．．．．．．．．．．．．．．．．．4
第二章 半導體蝕刻製程之介紹．．．．．．．．．．．．5
2.1 蝕刻原理．．．．．．．．．．．．．．．．．．．5
2.1.1 濕式蝕刻．．．．．．．．．．．．．．．．．．6
2.1.2 乾式蝕刻．．．．．．．．．．．．．．．．．．8
2.2 乾蝕刻機種類．．．．．．．．．．．．．．．．．11
2.2.1 反應式離子蝕刻．．．．．．．．．．．．．．．11
2.2.2 變壓器耦合型電漿．．．．．．．．．．．．．．12
2.2.3 電子迴旋共振式蝕刻．．．．．．．．．．．．．14
第三章 乾式光阻去除機簡介．．．．．．．．．．．．．17
3.1 乾式光阻去除機外觀與構造．．．．．．．．．．．17
3.2 反應室的製程原理．．．．．．．．．．．．．．．19
3.3 晶圓傳送模式．．．．．．．．．．．．．．．．．26
3.4 元件簡介．．．．．．．．．．．．．．．．．．．30
3.4.1 氣動閘閥．．．．．．．．．．．．．．．．．．30
3.4.2 電磁閥．．．．．．．．．．．．．．．．．．．33
3.4.3 乾式幫浦．．．．．．．．．．．．．．．．．．34
第四章 晶圓瑕疵改善．．．．．．．．．．．．．．．．36
4.1 瑕疵來源分析．．．．．．．．．．．．．．．．．36
4.2 確認晶圓瑕疵來源．．．．．．．．．．．．．．．46
4.3 乾式光阻去除機迴路改善．．．．．．．．．．．．50
4.4 結果與討論．．．．．．．．．．．．．．．．．．56
第五章 結論．．．．．．．．．．．．．．．．．．．．59
參考文獻．．．．．．．．．．．．．．．．．．．．．．61

1.莊達人，VLSI製造技術，高立圖書，民國九十一年。
2.張君彥，「N型氮化鎵磊晶薄膜的反應性離子蝕刻研究」，台北科技大學光電技術研究所，碩士論文，民國九十年。
3.葉文冠、翁俊仁，半導體製程技術與元件設計，東華書局，民國九十七年。
4.李軍鑫，「以乾式蝕刻運用於矽鍺異質元件之研製」，國立成功大學微電子所，碩士論文，民國九十二年。
5.楊子明，半導體製程設備技術，五南圖書，民國一百年。
6.EBARA, "Multi-stage Dry vacuum pump", EBARA instruction manual, 2002.
7.Gasonics, "PEP Operation and Software Guide", Gasonics International, 1999.
8.Hong Xiao、羅正忠、張鼎張、蕭宏，半導體製程技術導論，學銘圖書，民國九十一年。