臺灣博碩士論文加值系統

本論文分為兩個研究重點，分別探討相位相依光柵結構以及旁波瓣抑制光柵結構。我們以Floquet Bloch理論作為分析之基礎，針對TI、GSE兩種不同折射率分佈結構，求出傳輸、反射與輻射之頻譜。在相位相依光柵結構部份，以雙邊光源入射至光柵區，討論兩光源產生相位差對傳輸與反射的影響。由結果顯示，在一階布拉格效應時，當相位差使輸出為全透射時，相位差加?則會有全反射的現象。在二階布拉格效應時，輻射能量會隨著相位差做週期性變化，如果希望不受到相位影響，可選擇特定光柵區長度，則輻射能量不隨相位改變。在旁波瓣抑制光柵結構部份，為了抑制旁波，我們以Gaussian apodization，討論傳輸反射頻譜。由於在介電質波導結構Gaussian apodized連續函數在製程上不容易製作，我們將光柵離散化分為四十區，每光柵區長度相同，以duty cycle為調變量。由結果顯示，調變duty cycle後的結構，其反射頻譜即有抑制旁波的效果，在我們結構中抑制旁波效果最佳為降低30dB，但不具對稱性。

We analyze the sidelobe suppression for a periodic dielectric waveguide and the phase dependent gratins in this thesis. The Floquet Bloch theory is used to simulate TI and GSE structures of dielectric waveguides to obtain the transmission and reflection spectrum. For phase dependent gratings, we use two input signals. The calculated results show that at first Bragg, the propagation direction of a signal varies with different phases. At second Bragg, radiation power also varies with phase differences. Moreover, a grating length with phase independent for radiation powers is discovered in this study. For sidelobe suppression gratings, Gaussian apodization profile for duty cycle is used to suppress the sidelobe. Since Gaussian apodized distribution is a continue function, we divide the grating region by forty regions. Each grating region corresponds to a uniform duty cycle. The result shows that the sidelobe suppression is around 30dB.

中文摘要i
英文摘要ii
誌謝iii
目錄v
圖目錄vi
表目錄xii
第一章 緒論1
1.1 前言1
1.2 研究動機2
1.2.1 相位相依光柵2
1.2.2 旁波瓣抑制光柵4
1.3 研究方法5
1.3.1 相位相依光柵5
1.3.2 旁波瓣抑制光柵6
1.4 論文架構概述9
第二章 雙邊輸入相位相依光柵分析10
2.1 Floquet-Bloch理論10
2.2 輻射損失11
2.3 雙邊入射相位相依光柵結構理論分析15
2.4 傳輸、反射與輻射理論分析18
第三章 Gaussian Apodized旁波瓣抑制理論分析21
3.1 雙邊入射至二段不同光柵21
3.2 雙邊入射至多段不同光柵25
第四章 雙邊輸入相位相依光柵模擬結果29
4.1 TI結構29
4.1.1 雙邊入射至一階布拉格光柵結構30
4.1.2 雙邊入射至二階布拉格光柵結構42
4.2 GSE雷射結構51
4.2.1 雙邊入射至一階布拉格光柵結構52
4.2.2 雙邊入射至二階布拉格光柵結構62
第五章 單邊輸入旁波瓣抑制光柵模擬結果70
5.1 以四十區光柵的duty cycle做旁波抑制調變70
5.1.1 GSE結構71
5.1.2 TI結構76
5.1.3 TI結構增加p-spacer厚度80
5.2 調整光柵週期83
5.2.1 GSE結構:以等效折射率虛部共振最強處找出光柵週期83
5.2.2 GSE結構:以共振區等效折射率實部中點找出光柵週期90
5.2.3 TI結構95
5.2.4 TI結構增加p-spacer厚度103
第六章 結論108
參考文獻111

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