臺灣博碩士論文加值系統

本論文以鋁/氮化鋁多層膜做為玻璃基板與金錫共晶金屬間之應力緩衝層，利用多層膜大量的異質介面切換，可增加薄膜的韌性以及阻礙裂紋的擴展，對耐磨性有顯著的提升作用。另外鋁係為一具有極佳延展性的軟性金屬，而氮化鋁為陶瓷材料，其散熱係數及硬度皆極高，彼此交互堆疊之結構可做為一薄膜應力緩衝層，提升後續沈積薄膜之可靠性。本研究以一組、兩組、三組鋁/氮化鋁多層膜做試驗，再將最上層覆蓋一鋁層，將鋁表面作處理後，以電鍍法製備所需之金錫共晶層，接著探討不同緩衝層下之最佳鍵合溫度，可以發現隨著薄膜層數的增加，最佳鍵合溫度與剪力也跟著提高，接著做各種薄膜之SEM、XRD分析，可得出最佳剪力之製程條件，亦即可達到最佳金錫共晶相ζ(Au5Sn)的鍵合狀態。隨後以黃光微影製作覆晶圖案，並將LED以覆晶封裝鍵結，完成之LED樣品，在20mA工作下可得LED之順向電壓為4.09V。

In this thesis, the Al/AlN multiple-layer films were used as the strain release layers between glass substrate and AuSn eutectic metal. Due to a great amount of heterostructural interface change, it is beneficial to increase the material toughness, stop the fissure expansion, and enhance the abrasion resistance. In addition, Al is a soft metal with extraordinary ductility, and AlN, as a ceramic material, shows extremely high heat transfer coefficient and hardness. The integration of these two materials can form a structure that is applicable to create the strain release layers so as to enhance the later deposited film reliability. This study utilized sputtering to deposit one set, two sets, and three sets of Al/AlN multiple-layer films onto the glass substrates, and finalize an Al cap layer. After the aluminum film surfaces were chemically processed. The electroplating technique was used to prepare the required AuSn eutectic bonding layers. The optimized shear stress and bonding temperature were discussed for various release layers. It was found that the optimal bonding temperature and shear stress increased with increasing the number of film layers. Subsequently, the SEM and XRD analysis were performed on various films to find more the optimal eutectic phase ζ (Au5Sn). In the final, the photolithography was used to define the pattern of flip-chip LED bounding carrier. The encapsulated LED sample was operated at 20 mA, and the forward voltage was measured as 4.09 V.

目錄
摘要............................................i
Abstract........................................i
致謝............................................iii
目錄............................................iv
表目錄..........................................vi
圖目錄..........................................vii
第一章 緒論.....................................1
1-1 前言........................................1
1-2 LED 技術與發展簡介..........................2
1-2-1 LED發展...................................2
1-2-2 LED 市場概況..............................3
1-2-3 LED 封裝技術..............................4
1-2-3金錫共晶...................................8
1-2-4 Al/AlN簡介................................10
1-3 研究動機....................................12
第二章 量測方法與儀器介紹.......................18
第二章 量測方法與儀器介紹.......................18
2-1濺鍍製程.....................................18
2-2電鍍及化學鎳.................................21
2-3黃光微影.....................................23
2-4 量測設備介紹................................25
2-4-1 α-step...................................25
2-4-2 剪力量測..................................25
第三章 實驗方法與流程...........................31
3-1實驗流程.....................................31
3-2薄膜製備.....................................32
3-2-1應力緩衝層製備.............................32
3-2-2 鋅置換及化學鎳............................33
3-3-3金/錫電鍍..................................34
3-3-4 熱壓鍵合..................................35
3-3圖形化製作...................................40
第四章 結果討論.................................41
4-1 剪力分析....................................41
4-2 SEM分析.....................................47
4-2-1一組緩衝層結構.............................47
4-2-2 兩組緩衝層結構............................48
4-2-3 三組緩衝層結構............................48
4-3 XRD分析.....................................63
4-3-1 Al/AlN....................................63
4-3-2 AuSn XRD分析..............................64
4-4 LED特性量測.................................73
第五章 結論.....................................74
參考文獻........................................75
附錄(一)........................................77
Extended Abstract...............................81
簡歷............................................86

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