臺灣博碩士論文加值系統

本論文為金屬-半導體-金屬式MAPbBr3鈣鈦礦晶體光偵測器之研究。以定溫成長製作鈣鈦礦晶體。探討不同長晶溫度對於晶體結構之影響，藉由XRD和PL分析晶體結構、晶體均勻程度以及缺陷，找出最佳的晶體製程溫度，再將鈣鈦礦晶體製成光偵測器，量測出光偵測器之電流-電壓特性曲線（I-V curve），以及計算出其光響應度（Responsivity）與載子遷移（Carrier Mobility）。光偵測器之電極為指叉式結構，其中以MAPbBr3鈣鈦礦晶體半導體材料作為吸光層，C60作為電子傳輸層，在入射光波長為400 nm時，呈現較佳的光響應度。當光偵測器外加偏壓為15 V、16 V、17 V、18 V、19 V及20 V時，其最佳光響應度分別為13.13 A/W、14.97 A/W、17.13 A /W、19.98 A/W、22.48 A/W及24.50 A/W，其載子遷移率為14.4 cm2V-1s-1。

This thesis is on metal-semiconductor-metal MAPbBr3 perovskite crystal photodetector. Perovskite crystals are produced by constant temperature growth. To explore the effect of different crystal growth temperature on crystal structure, we analyzed the crystal structure, crystal uniformity, and defects by XRD and PL. We found the best temperature for crystal growth and subsequently fabricated the perovskite crystal into photodetector. The current-to-voltage characteristic curve（IV curve）, optical responsivity, and carrier mobility of the light detector were measured. The electrode of the photodetector is an interdigitated structure in which MAPbBr3 perovskite crystal semiconductor materials are used as a light absorbing layer. On the electrode, C60 is used as an electron transport layer, resulting in a light response exhibited at an incident light wavelength of 400 nm. When the photodetector was biased to 15V, 16V, 17V, 18V, 19V and 20V, the optimal optical responsivity is 13.13 A/W, 14.97 A/W, 17.13 A/W, 19.98 A/W, 22.48 A/W and 24.50 A/W; the carrier mobility was 14.4 cm2V-1s-1.

摘　要 i
ABSTRACT ii
誌謝 iv
目錄 v
圖目錄 viii
第一章 緒論 1
1.1 前言 1
1.2 研究動機與論文架構 2
第二章 理論基礎與文獻回顧 3
2.1 MAPbBr3鈣鈦礦材料特性 3
2.1.1 載子遷移率高、擴散長度長 3
2.1.2 發光效率高 4
2.1.3 可調能隙 4
2.1.4 電子傳輸層C60材料特性 4
2.2 金屬-半導體-金屬光偵測器(MSM-PD)之原理 5
2.2.1 金屬-半導體接面理論 5
2.2.2 金屬-半導體接面電流傳輸機制 7
2.2.3 MSM-PD的外加偏壓操作 9
2.2.4 MSM-PD的暗電流與光電流 12
2.2.5 響應度介紹及影響響應度之參數 13
2.2.6 光電流產生機制與其電流分量 15
2.2.7 影響光偵測器特性的不理想因素 16
第三章 實驗方法與步驟 20
3.1 實驗架構與元件結構 20
3.1.1 實驗材料 20
3.1.2 實驗設備 20
3.2 實驗步驟 23
3.3 實驗量測儀器簡介 23
3.3.1 高解析熱場發射掃描式電子顯微鏡(FE-SEM) 23
3.3.2 X光繞射儀(X-ray diffractometer) 24
3.3.3 高感度、多功能螢光分光光譜儀(Fluorescence Spectrophotometer) 24
3.3.4 微型光譜儀 25
3.4光偵測器量測設備 25
3.4.1 I-V量測設備 25
3.4.2 光響應度之量測設備 25
第四章 實驗結果與討論 26
4.1 MAPbBr3晶體材料分析 26
4.1.1 MAPbBr3晶體SEM分析 26
4.1.2 MAPbBr3晶體PL分析 26
4.1.3 MAPbBr3晶體吸收光譜分析 27
4.1.4 MAPbBr3晶體XRD分析 27
4.1.5 MAPbBr3晶體霍爾量測(Hall measurement)分析 27
4.2 鈣鈦礦光偵測器特性分析 28
4.2.1 暗電流與光電流量測 28
4.2.2 分光電流量測結果 29
4.2.3 外加偏壓對響應度的影響 30
第五章 結論 32
參考文獻 58

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