臺灣博碩士論文加值系統

薄膜沉積是半導體製程中的其中一環，一般來說，在自動化薄膜製程的機台上，都會有自行清潔腔體的功能，因為當矽晶圓完成鍍薄膜後，腔體需把腔體上鍍薄膜的部分清除掉，重新鍍一層薄膜上去，通常要完成這個工作會使用遠距電漿系統。遠距電漿系統透過微波氬氣產生的電漿，將氟化氮分解成氮氣和游離的氟離子，進入腔體後，藉由氟離子強大的活性，去除製程中剩餘的二氧化矽，達成製程腔體內的清潔作用。目前在業界，例如應用材料公司等半導體設備商，普遍使用遠距電漿系統達到腔體清潔的目的，以增加矽晶圓的產量。因此，如何使系統能達到最大的作用，是一個重要的議題。本研究使用COMSOL(多重物理耦合模擬)，去模擬遠距電漿系統產生的電漿在腔體裡面的流場，藉著改變加熱板到上方精密噴灑頭的間距，來模擬及探討流場的改變。模擬結果顯示，加熱板表面的壓力隨間距減少而增加，而加熱板下方隨間距減少(6.5公分減低到3公分)而流場增加，清潔效果上升。但氣體流場在間距為3公分時，流場不會繼續增加。同時，間距從3公分減少到2公分時，加熱板表面的壓力會增加，可能造成加熱板表面的過度清潔，而縮短加熱板的壽命，增加成本的支出，且並未達到清潔效果的提升。

Thin film deposition is one of the most important processes in fabricating semiconductor devices. An automatic deposition system usually equiped with self-cleaning function; the system can clean a vacuum chamber after chemical reaction inside the chamber. Remote plasma system usually generates plasma by decomposing argon via buildt-in microwave generation system and the plasma thus ironize NF3 into nitrogen and fluoride ion that can react with silicon dioxide residue around the chamber to achieve self-clean. Some semiconductor manufacturing companies, such as Applied Materials, use Remote plasma system to enhance the self-cleaning and wafer throughput. Therefore, maintenance period extension and self-cleaning enhancement become important issues for an equipment engineer. This thesis studied the cleaning efficiency via plasma flow and lifetime of the heater via out wall pressure of a reaction chamber using finite element modeling. The results indicate that the pressure of the heater and the plasma flow increases with decreasing spacing (from 6.5 to 3 cm), wherein the spacing is the distance between heater and showerhead. However, the plasma flow is limited from going up when the spacing was beyond 3 cm. This result implies the heater may be over cleaned, or improperly cleaned. On the contrast, the lifetime can be shortened when the spacing is too small.

摘 要 I
Abstract II
致謝 III
目錄 IV
圖目錄 VI
表目錄 VIII
第一章 緒論 1
1.1 研究背景與目的 1
1.2 文獻回顧 3
1.3 本文架構 5
第二章 理論背景 6
2.1 電漿簡介與應用 6
2.1.1 微波電漿源 11
2.1.2 電感式耦合電漿源 11
2.2 蝕刻製程 13
2.2.1 濺擊蝕刻 13
2.2.2 電漿蝕刻 14
2.2.3 反應性離子蝕刻 15
2.3 化學氣相沉積腔體清洗方法的進展 16
2.3.1 濕式清洗 16
2.3.2 原位電漿清洗 16
2.3.3 遠程電漿清洗 17
2.4 遠程電漿系統 19
2.4.1 第一代遠程電漿系統 19
2.4.2 第二代遠程電漿系統 20
2.4.3 第三代遠程電漿系統 22
第三章 電漿流場模擬方法 24
3.1 Comsol多重物理耦合模擬 24
3.2 機台結構與模擬方式 26
3.2.1 腔體結構 26
3.2.2 流場模擬 29
3.2.3 加熱板間距之影響 34
3.2.4 結果與討論 37
第四章 結論 39
參考文獻 40

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